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History of Publication (No. 3)

  1. "Low-energy electron energy loss spectroscopy on YBa2Cu3O7-y"
    • A. Ando, K. Saiki, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 27 (1988) L304-307
  2. "Characteristic secondary electron emission from graphite and glassy carbon surfaces"
    • K. Ueno, T. Kumihashi, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 27 (1988) L759-761
  3. "Application of Van der Waals Epitaxy to Highly Hterogeneous Systems"
    • K. Saiki, K. Ueno, T. Shimada and A. Koma
    • J. Cryst. Growth 95 (1989) 603-606
  4. "Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces"
    • K. Ueno, T. Shimada, K. Saiki and A. Koma
    • Appl. Phys. Lett. 56 (1990) 327-329
  5. "Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica"
    • K. Ueno, K. Saiki, T. Shimada and A. Koma
    • J. Vac. Sci. Technol. A 8 (1990) 68-72
  6. "Van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2"
    • F. S. Ohuchi, B. A. Parkinson, K. Ueno and A. Koma
    • J. Appl. Phys. 68 (1990) 2168-2175
  7. "Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials"
    • B. A. Parkinson, F. S. Ohuchi, K. Ueno and A. Koma
    • Appl. Phys. Lett. 58 (1991) 472-474
  8. "Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials"
    • A. Koma, K. Ueno and K. Saiki
    • J. Cryst. Growth 111 (1991) 1029-1032
  9. "Growth of MoSe2 thin films with Van der Waals epitaxy"
    • F. S. Ohuchi, T. Shimada, B. A. Parkinson, K. Ueno and A. Koma
    • J. Cryst. Growth 111 (1991) 1033-1037
  10. "Heteroepitaxy of layered semiconductor GaSe on a GaAs(111)B surface"
    • K. Ueno, H. Abe, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 30 (1991) L1352-1354
  11. "Hetero-epitaxy of layered compound semiconductor GaSe onto GaAs surfaces for very effective passivation of nanometer structures"
    • K. Ueno, H. Abe, K. Saiki, A. Koma, H. Oigawa and Y. Nannichi
    • Surf. Sci. 267 (1992) 43-46
  12. "Heteroepitaxial growth of layered semiconductor GaSe on a hydrogen-terminated Si(111) surface"
    • K. Y. Liu, K. Ueno, Y. Fujikawa, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 32 (1993) L434-437
  13. "Heteroepitaxial growth of layered GaSe films on GaAs(001) surfaces"
    • H. Abe, K. Ueno, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 32 (1993) L1444-1447
  14. "Scanning tunneling microscope observation of the metal-adsorbed layered semiconductor surfaces"
    • H. Abe, K. Kataoka, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 34 (1995) 3342-3345
  15. "Van der Waals epitaxy on hydrogen-terminated Si(111) surfaces and investigation of its growth mechanism by atomic force microscope"
    • K. Ueno, M. Sakurai and A. Koma
    • J. Cryst. Growth 150 (1995) 1180-1185
  16. "Preparation of GaS thin films by molecular beam epitaxy"
    • H. Yamada, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 35 (1996) L568-570
  17. "Nanostructure fabrication by selective growth of molecular crystals on layered material substrates"
    • K. Ueno, K. Sasaki, N. Takeda, K. Saiki and A. Koma
    • Appl. Phys. Lett. 70 (1997) 1104-1106
  18. "Investigation of the growth mechanism of layered semiconductor GaSe"
    • K. Ueno, N. Takeda, K. Sasaki and A. Koma
    • Appl. Surf. Sci. 113-114 (1997) 38-42
  19. "Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope"
    • K. Sasaki, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 36 (1997) 4061-4064
  20. "Heterowpitaxial Growth of Lattice Mismatched Materials using Layered Compound Buffer Layers"
    • T. Loeher, K. Ueno and A. Koma
    • Appl. Surf. Sci. 130-132 (1998) 334-339
  21. "Fabrication of C60 Nanostructures by Selective Growth on GaSe/MoS2 and InSe/MoS2 Heterostructure Substrates"
    • K. Ueno, K. Sasaki, T. Nakahara and A. Koma
    • Appl. Surf. Sci. 130-132 (1998) 670-675
  22. "A Novel Method to Fabricate a Molecular Quantum Structure: Selective Growth of C60 on Layered Material Heterostructures"
    • K. Ueno, K. Sasaki, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 38 (1999) 511-514
  23. "Growth and Characterization of Ga2Se3/GaAs(100) Epitaxial Thin Films"
    • K. Ueno, M. Kawayama, Z. R. Dai, A. Koma and F. S. Ohuchi
    • J. Cryst. Growth 207 (1999) 69-76
  24. "Highly sensitive RHEED measurement by use of micro-channel imaging plate"
    • K. Saiki, T. Kono, K. Ueno and A. Koma
    • Rev. Sci. Instrum. 71 (2000) 3478-3479
  25. "Investigation of epitaxial arrangement and electronic structure of a La@C82 film grown on a MoS2 surface"
    • K. Iizumi, Y. Uchino, K. Ueno, A. Koma, K. Saiki, Y. Inada, K. Nagai, Y. Iwasa and T. Mitani
    • Phys. Rev. B 62 (2000) 8281-8285
  26. "Investigation of the Growth Mechanism of an InSe Epitaxial Layer on a MoS2 Substrate"
    • T. Hayashi, K. Ueno, K. Saiki and A. Koma
    • J. Cryst. Growth 219 (2000) 115-122
  27. "Electron Energy Loss Spectroscopy of C60 Monolayer Films on Active and Inactive Surfaces"
    • K. Iizumi, K. Ueno, K. Saiki and A. Koma
    • Appl. Surf. Sci. 169-170 (2001) 142-146
  28. "Electron-Energy-Loss Spectroscopy of KxC60 and K-halides: Comparison in the K3p Excitation Region"
    • K. Ueno, Y. Uchino, K. Iizumi, K. Saiki and A. Koma
    • Appl. Surf. Sci. 169-170 (2001) 184-187
  29. "Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate"
    • K. Ueno, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 40 (2001) 1888-1891
  30. "Epitaxial growth and electronic structure of a C60 derivative prepared by using a solution spray technique"
    • T. Shimada, H. Nakatani, K. Ueno, A. Koma, Y. Kuninobu, M. Sawamura and E. Nakamura
    • J. Appl. Phys. 90 (2001) 209-212
  31. "Highly-stable passivation of a Si(111) surface using bilayer-GaSe"
    • K. Ueno, H. Shirota, T. Kawamura, T. Shimada, K. Saiki and A. Koma
    • Appl. Surf. Sci. 190 (2002) 485-490
  32. "Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate"
    • K. Ueno, S. Tokuchi, K. Saiki and A. Koma
    • J. Cryst. Growth. 237-239 (2002) 1610-1614.
  33. "Nanoscale anodic oxidation on a Si(111) surface terminated by bilayer-GaSe"
    • K. Ueno, R. Okada, K. Saiki and A. Koma
    • Surf. Sci. 514 (2002) 27-32
  34. "Visible light photoemission and negative electron affinity of single-crystalline CsCl thin films"
    • G. Yoshikawa, M. Kiguchi, K. Ueno, A. Koma and K. Saiki
    • Surf.Sci. 544 (2003) 220-226
  35. "Accumulation and Depletion Layer Thicknesses in Organic Field Effect Transistors"
    • M. Kiguchi, M. Nakayama, K. Fujiwara, K. Ueno, T. Shimada and K. Saiki
    • Jpn. J. Appl. Phys. 42 (2003) L1408-L1410
  36. "Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure"
    • M. Katayama, K. Ueno, A. Koma, M. Kiguchi and K. Saiki
    • Jpn. J. Appl. Phys. 43 (2004) L203-L205
  37. "Methyl-terminated Si(111) surface as the ultra thin protection layer to fabricate position-controlled alkyl SAMs by using atomic force microscope anodic oxidation"
    • R. Okada, T. Miyadera, T. Shimada, A. Koma, K. Ueno and K. Saiki
    • Surf. Sci. 552 (2004) 46-52
  38. "Morphological change of C60 monolayer epitaxial films under photoexcitation"
    • Y. Yamamoto, H. Ichikawa, K. Ueno, A. Koma, K. Saiki, T. Shimada
    • Phys. Rev. B 70 (2004) 155415
  39. "Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)"
    • T. Shimada, H. Nogawa, T. Hasegawa, R. Okada, H. Ichikawa, K. Ueno and K. Saiki
    • Appl. Phys. Lett. 87 (2005) 061917
  40. "Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors"
    • K. Ueno, S. Abe, R. Onoki and K. Saiki
    • J. Appl. Phys. 98 (2005) 114503 (5 pages)
  41. "Fabrication of an organic field-effect transistor on a mica gate dielectric"
    • A. Matsumoto, R. Onoki, K. Ueno, S. Ikeda and K. Saiki
    • Chem. Lett. 35 (2006) 354-355
  42. "In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates"
    • G. Yoshikawa, T. Miyader, R. Onoki, K. Ueno, I. Nakai, S. Entani, S. Ikeda, D. Guo, M. Kiguchi, H. Kondoh,T. Ohta and K. Saiki
    • Surf. Sci. 600 (2006) 2518-2522
  43. "Structure of Organic Thin Films Grown on Surface-modified Tantalum Oxide"
    • R. Onoki, S. Abe, K. Ueno, H. Nakahara and K. Saiki
    • Chem. Lett. 35 (2006) 746-747
  44. "Anisotropic Polymerization of a Long-chain Diacetylene Derivative Langmuir-Blodgett Film on a Step-bunched SiO2/Si Surface"
    • R. Onoki, K. Ueno, H. Nakahara, G. Yoshikawa, S. Ikeda, S. Entani, T. Miyadera, I. Nakai, H. Kondoh, T. Ohta, M. Kiguchi and K. Saiki
    • Langmuir 22 (2006) 5742-5747
  45. "Effect of Organic Buffer Layer on Performance of Pentacene Field-Effect Transistor Fabricated on Natural Mica Gate Dielectric"
    • A. Matsumoto, R. Onoki, S. Ikeda, K. Saiki and K. Ueno
    • Jpn. J. Appl. Phys. 46 (2007) L913-L916
  46. "Layer-by-layer growth of C60 thin films by continuous-wave infrared laser deposition"
    • S. Yaginuma, K. Itaka, M. Haemori, M. Katayama, K. Ueno, T. Ohnishi, M. Lippmaa, Y. Matsumoto and H. Koinuma
    • Appl. Phys. Express 1 (2008) 015005
  47. "Nano-transfer of the polythiophene molecular alignment onto the step-bunched vicinal Si(111) substrate"
    • R. Onoki, G. Yoshikawa, Y. Tsuruma, S. Ikeda, K. Saiki and K. Ueno
    • Submitted (A -> E)