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History of Publication (No. 7)

  1. "Low-energy electron energy loss spectroscopy on YBa2Cu3O7-y"
    • A. Ando, K. Saiki, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 27 (1988) L304-307
  2. "Characteristic secondary electron emission from graphite and glassy carbon surfaces"
    • K. Ueno, T. Kumihashi, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 27 (1988) L759-761
  3. "Application of Van der Waals Epitaxy to Highly Hterogeneous Systems"
    • K. Saiki, K. Ueno, T. Shimada and A. Koma
    • J. Cryst. Growth 95 (1989) 603-606
  4. "Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces"
    • K. Ueno, T. Shimada, K. Saiki and A. Koma
    • Appl. Phys. Lett. 56 (1990) 327-329
  5. "Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica"
    • K. Ueno, K. Saiki, T. Shimada and A. Koma
    • J. Vac. Sci. Technol. A 8 (1990) 68-72
  6. "Van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2"
    • F. S. Ohuchi, B. A. Parkinson, K. Ueno and A. Koma
    • J. Appl. Phys. 68 (1990) 2168-2175
  7. "Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials"
    • B. A. Parkinson, F. S. Ohuchi, K. Ueno and A. Koma
    • Appl. Phys. Lett. 58 (1991) 472-474
  8. "Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials"
    • A. Koma, K. Ueno and K. Saiki
    • J. Cryst. Growth 111 (1991) 1029-1032
  9. "Growth of MoSe2 thin films with Van der Waals epitaxy"
    • F. S. Ohuchi, T. Shimada, B. A. Parkinson, K. Ueno and A. Koma
    • J. Cryst. Growth 111 (1991) 1033-1037
  10. "Heteroepitaxy of layered semiconductor GaSe on a GaAs(111)B surface"
    • K. Ueno, H. Abe, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 30 (1991) L1352-1354
  11. "Hetero-epitaxy of layered compound semiconductor GaSe onto GaAs surfaces for very effective passivation of nanometer structures"
    • K. Ueno, H. Abe, K. Saiki, A. Koma, H. Oigawa and Y. Nannichi
    • Surf. Sci. 267 (1992) 43-46
  12. "Heteroepitaxial growth of layered semiconductor GaSe on a hydrogen-terminated Si(111) surface"
    • K. Y. Liu, K. Ueno, Y. Fujikawa, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 32 (1993) L434-437
  13. "Heteroepitaxial growth of layered GaSe films on GaAs(001) surfaces"
    • H. Abe, K. Ueno, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 32 (1993) L1444-1447
  14. "Scanning tunneling microscope observation of the metal-adsorbed layered semiconductor surfaces"
    • H. Abe, K. Kataoka, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 34 (1995) 3342-3345
  15. "Van der Waals epitaxy on hydrogen-terminated Si(111) surfaces and investigation of its growth mechanism by atomic force microscope"
    • K. Ueno, M. Sakurai and A. Koma
    • J. Cryst. Growth 150 (1995) 1180-1185
  16. "Preparation of GaS thin films by molecular beam epitaxy"
    • H. Yamada, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 35 (1996) L568-570
  17. "Nanostructure fabrication by selective growth of molecular crystals on layered material substrates"
    • K. Ueno, K. Sasaki, N. Takeda, K. Saiki and A. Koma
    • Appl. Phys. Lett. 70 (1997) 1104-1106
  18. "Investigation of the growth mechanism of layered semiconductor GaSe"
    • K. Ueno, N. Takeda, K. Sasaki and A. Koma
    • Appl. Surf. Sci. 113-114 (1997) 38-42
  19. "Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope"
    • K. Sasaki, K. Ueno and A. Koma
    • Jpn. J. Appl. Phys. 36 (1997) 4061-4064
  20. "Heterowpitaxial Growth of Lattice Mismatched Materials using Layered Compound Buffer Layers"
    • T. Loeher, K. Ueno and A. Koma
    • Appl. Surf. Sci. 130-132 (1998) 334-339
  21. "Fabrication of C60 Nanostructures by Selective Growth on GaSe/MoS2 and InSe/MoS2 Heterostructure Substrates"
    • K. Ueno, K. Sasaki, T. Nakahara and A. Koma
    • Appl. Surf. Sci. 130-132 (1998) 670-675
  22. "A Novel Method to Fabricate a Molecular Quantum Structure: Selective Growth of C60 on Layered Material Heterostructures"
    • K. Ueno, K. Sasaki, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 38 (1999) 511-514
  23. "Growth and Characterization of Ga2Se3/GaAs(100) Epitaxial Thin Films"
    • K. Ueno, M. Kawayama, Z. R. Dai, A. Koma and F. S. Ohuchi
    • J. Cryst. Growth 207 (1999) 69-76
  24. "Highly sensitive RHEED measurement by use of micro-channel imaging plate"
    • K. Saiki, T. Kono, K. Ueno and A. Koma
    • Rev. Sci. Instrum. 71 (2000) 3478-3479
  25. "Investigation of epitaxial arrangement and electronic structure of a La@C82 film grown on a MoS2 surface"
    • K. Iizumi, Y. Uchino, K. Ueno, A. Koma, K. Saiki, Y. Inada, K. Nagai, Y. Iwasa and T. Mitani
    • Phys. Rev. B 62 (2000) 8281-8285
  26. "Investigation of the Growth Mechanism of an InSe Epitaxial Layer on a MoS2 Substrate"
    • T. Hayashi, K. Ueno, K. Saiki and A. Koma
    • J. Cryst. Growth 219 (2000) 115-122
  27. "Electron Energy Loss Spectroscopy of C60 Monolayer Films on Active and Inactive Surfaces"
    • K. Iizumi, K. Ueno, K. Saiki and A. Koma
    • Appl. Surf. Sci. 169-170 (2001) 142-146
  28. "Electron-Energy-Loss Spectroscopy of KxC60 and K-halides: Comparison in the K3p Excitation Region"
    • K. Ueno, Y. Uchino, K. Iizumi, K. Saiki and A. Koma
    • Appl. Surf. Sci. 169-170 (2001) 184-187
  29. "Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate"
    • K. Ueno, K. Saiki and A. Koma
    • Jpn. J. Appl. Phys. 40 (2001) 1888-1891
  30. "Epitaxial growth and electronic structure of a C60 derivative prepared by using a solution spray technique"
    • T. Shimada, H. Nakatani, K. Ueno, A. Koma, Y. Kuninobu, M. Sawamura and E. Nakamura
    • J. Appl. Phys. 90 (2001) 209-212
    • DOI:10.1063/1.1379052
  31. "Highly-stable passivation of a Si(111) surface using bilayer-GaSe"
    • K. Ueno, H. Shirota, T. Kawamura, T. Shimada, K. Saiki and A. Koma
    • Appl. Surf. Sci. 190 (2002) 485-490
  32. "Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrate"
    • K. Ueno, S. Tokuchi, K. Saiki and A. Koma
    • J. Cryst. Growth. 237-239 (2002) 1610-1614.
  33. "Nanoscale anodic oxidation on a Si(111) surface terminated by bilayer-GaSe"
    • K. Ueno, R. Okada, K. Saiki and A. Koma
    • Surf. Sci. 514 (2002) 27-32
  34. "Visible light photoemission and negative electron affinity of single-crystalline CsCl thin films"
  35. "Accumulation and Depletion Layer Thicknesses in Organic Field Effect Transistors"
    • M. Kiguchi, M. Nakayama, K. Fujiwara, K. Ueno, T. Shimada and K. Saiki
    • Jpn. J. Appl. Phys. 42 (2003) L1408-L1410
    • DOI:10.1143/JJAP.42.L1408
  36. "Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure"
    • M. Katayama, K. Ueno, A. Koma, M. Kiguchi and K. Saiki
    • Jpn. J. Appl. Phys. 43 (2004) L203-L205
    • DOI:10.1143/JJAP.43.L203
  37. "Methyl-terminated Si(111) surface as the ultra thin protection layer to fabricate position-controlled alkyl SAMs by using atomic force microscope anodic oxidation"
  38. "Morphological change of C60 monolayer epitaxial films under photoexcitation"
  39. "Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)"
    • T. Shimada, H. Nogawa, T. Hasegawa, R. Okada, H. Ichikawa, K. Ueno and K. Saiki
    • Appl. Phys. Lett. 87 (2005) 061917
    • DOI:10.1063/1.2008371
  40. "Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors"
    • K. Ueno, S. Abe, R. Onoki and K. Saiki
    • J. Appl. Phys. 98 (2005) 114503 (5 pages)
    • DOI:10.1063/1.2138807
  41. "Fabrication of an organic field-effect transistor on a mica gate dielectric"
    • A. Matsumoto, R. Onoki, K. Ueno, S. Ikeda and K. Saiki
    • Chem. Lett. 35 (2006) 354-355
    • DOI:10.1246/cl.2006.354
  42. "In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO2 substrates"
    • G. Yoshikawa, T. Miyader, R. Onoki, K. Ueno, I. Nakai, S. Entani, S. Ikeda, D. Guo, M. Kiguchi, H. Kondoh,T. Ohta and K. Saiki
    • Surf. Sci. 600 (2006) 2518-2522
    • DOI:10.1016/j.susc.2006.04.012
  43. "Structure of Organic Thin Films Grown on Surface-modified Tantalum Oxide"
    • R. Onoki, S. Abe, K. Ueno, H. Nakahara and K. Saiki
    • Chem. Lett. 35 (2006) 746-747
    • DOI:10.1246/cl.2006.746
  44. "Anisotropic Polymerization of a Long-chain Diacetylene Derivative Langmuir-Blodgett Film on a Step-bunched SiO2/Si Surface"
    • R. Onoki, K. Ueno, H. Nakahara, G. Yoshikawa, S. Ikeda, S. Entani, T. Miyadera, I. Nakai, H. Kondoh, T. Ohta, M. Kiguchi and K. Saiki
    • Langmuir 22 (2006) 5742-5747
    • DOI:10.1021/la060482d
  45. "Effect of Organic Buffer Layer on Performance of Pentacene Field-Effect Transistor Fabricated on Natural Mica Gate Dielectric"
    • A. Matsumoto, R. Onoki, S. Ikeda, K. Saiki and K. Ueno
    • Jpn. J. Appl. Phys. 46 (2007) L913-L916
    • DOI:10.1143/JJAP.46.L913
  46. "Layer-by-layer growth of C60 thin films by continuous-wave infrared laser deposition"
    • S. Yaginuma, K. Itaka, M. Haemori, M. Katayama, K. Ueno, T. Ohnishi, M. Lippmaa, Y. Matsumoto and H. Koinuma
    • Appl. Phys. Express 1 (2008) 015005
    • DOI:10.1143/APEX.1.015005
  47. "Nano-transfer of the polythiophene molecular alignment onto the step-bunched vicinal Si(111) substrate"
    • R. Onoki, G. Yoshikawa, Y. Tsuruma, S. Ikeda, K. Saiki and K. Ueno
    • Langmuir 24 (2008) 11605-11610
    • DOI:10.1021/la8016722
  48. "Nucleation on the substrate surfaces during liquid flux mediated vacuum deposition of rubrene"
  49. "Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orienation template for quasi single crystalline epitaxial growth of thin film phase pentacene"
    • T. Shimada, M. Ohtomo, T. Suzuki, T. Hasegawa, K. Ueno, S. Ikeda, K. Saiki, M. Sasaki and K. Inaba
    • Appl. Phys. Lett. 93 (2008) 223303 (3 pages)
    • DOI:10.1063/1.3040309
  50. "Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta2O5 gate dielectric with Au source/drain electrodes"
    • S. Takebayashi, S. Abe, K. Saiki and K. Ueno
    • Appl. Phys. Lett. 94 (2009) 083305 (3 pages)
    • Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article may be found at http://link.aip.org/link/?APL/94/083305.
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    • DOI:10.1063/1.3089692