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+"Low-energy electron energy loss spectroscopy on YBa&subsc{2};Cu&subsc{3};O&subsc{7-y};"
--A. Ando, K. Saiki, K. Ueno and A. Koma
--Jpn. J. Appl. Phys. ''27'' (1988) L304-307
--DOI:[[10.1143/JJAP.27.L304:http://dx.doi.org/10.1143/JJAP.27.L304]]
+"Characteristic secondary electron emission from graphite and glassy carbon surfaces"
--K. Ueno, T. Kumihashi, K. Saiki and A. Koma
--Jpn. J. Appl. Phys. ''27'' (1988) L759-761
--DOI:[[10.1143/JJAP.27.L759:http://dx.doi.org/10.1143/JJAP.27.L759]]
+"Application of Van der Waals Epitaxy to Highly Hterogeneous Systems"
--K. Saiki, K. Ueno, T. Shimada and A. Koma
--J. Cryst. Growth ''95'' (1989) 603-606
--DOI:[[10.1016/0022-0248(89)90475-2:http://dx.doi.org/10.1016/0022-0248(89)90475-2]]
+[["Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs (111) surfaces":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002593]]
--K. Ueno, T. Shimada, K. Saiki and A. Koma
--Appl. Phys. Lett. ''56'' (1990) 327-329
--DOI:[[10.1063/1.102817:http://dx.doi.org/10.1063/1.102817]]
+[["Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002594]]
--K. Ueno, K. Saiki, T. Shimada and A. Koma
--J. Vac. Sci. Technol. A ''8'' (1990) 68-72
--DOI:[[10.1116/1.576983:http://dx.doi.org/10.1116/1.576983]]
+[["Van der Waals epitaxial growth and characterization of MoSe&subsc{2}; thin films on SnS&subsc{2};":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002595]]
--F. S. Ohuchi, B. A. Parkinson, K. Ueno and A. Koma
--J. Appl. Phys. ''68'' (1990) 2168-2175
--DOI:[[10.1063/1.346574:http://dx.doi.org/10.1063/1.346574]]
+[["Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002596]]
--B. A. Parkinson, F. S. Ohuchi, K. Ueno and A. Koma
--Appl. Phys. Lett. ''58'' (1991) 472-474
--DOI:[[10.1063/1.104611:http://dx.doi.org/10.1063/1.104611]]
+"Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials"
--A. Koma, K. Ueno and K. Saiki
--J. Cryst. Growth ''111'' (1991) 1029-1032
--DOI:[[10.1016/0022-0248(91)91126-U:http://dx.doi.org/10.1016/0022-0248(91)91126-U]]
+"Growth of MoSe&subsc{2}; thin films with Van der Waals epitaxy"
--F. S. Ohuchi, T. Shimada, B. A. Parkinson, K. Ueno and A. Koma
--J. Cryst. Growth ''111'' (1991) 1033-1037
--DOI:[[10.1016/0022-0248(91)91127-V:http://dx.doi.org/10.1016/0022-0248(91)91127-V]]
+"Heteroepitaxy of layered semiconductor GaSe on a GaAs(111)B surface"
--K. Ueno, H. Abe, K. Saiki and A. Koma
--Jpn. J. Appl. Phys. ''30'' (1991) L1352-1354
--DOI:[[10.1143/JJAP.30.L1352:http://dx.doi.org/10.1143/JJAP.30.L1352]]
+"Hetero-epitaxy of layered compound semiconductor GaSe onto GaAs surfaces for very effective passivation of nanometer structures"
--K. Ueno, H. Abe, K. Saiki, A. Koma, H. Oigawa and Y. Nannichi
--Surf. Sci. ''267'' (1992) 43-46
--DOI:[[10.1016/0039-6028(92)91084-O:http://dx.doi.org/10.1016/0039-6028(92)91084-O]]
+"Heteroepitaxial growth of layered semiconductor GaSe on a hydrogen-terminated Si(111) surface"
--K. Y. Liu, K. Ueno, Y. Fujikawa, K. Saiki and A. Koma
--Jpn. J. Appl. Phys. ''32'' (1993) L434-437
--DOI:[[10.1143/JJAP.32.L434:http://dx.doi.org/10.1143/JJAP.32.L434]]
+"Heteroepitaxial growth of layered GaSe films on GaAs(001) surfaces"
--H. Abe, K. Ueno, K. Saiki and A. Koma
--Jpn. J. Appl. Phys. ''32'' (1993) L1444-1447
--DOI:[[10.1143/JJAP.32.L1444:http://dx.doi.org/10.1143/JJAP.32.L1444]]
+"Scanning tunneling microscope observation of the metal-adsorbed layered semiconductor surfaces"
--H. Abe, K. Kataoka, K. Ueno and A. Koma
--Jpn. J. Appl. Phys. ''34'' (1995) 3342-3345
--DOI:[[10.1143/JJAP.34.3342:http://dx.doi.org/10.1143/JJAP.34.3342]]
+"Van der Waals epitaxy on hydrogen-terminated Si(111) surfaces and investigation of its growth mechanism by atomic force microscope"
--K. Ueno, M. Sakurai and A. Koma
--J. Cryst. Growth ''150'' (1995) 1180-1185
--DOI:[[10.1016/0022-0248(95)80125-V:http://dx.doi.org/10.1016/0022-0248(95)80125-V]]
+"Preparation of GaS thin films by molecular beam epitaxy"
--H. Yamada, K. Ueno and A. Koma
--Jpn. J. Appl. Phys. ''35'' (1996) L568-570
--DOI:[[10.1143/JJAP.35.L568:http://dx.doi.org/10.1143/JJAP.35.L568]]
+[["Nanostructure fabrication by selective growth of molecular crystals on layered material substrates":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002597]]
--K. Ueno, K. Sasaki, N. Takeda, K. Saiki and A. Koma
--Appl. Phys. Lett. ''70'' (1997) 1104-1106
--DOI:[[10.1063/1.118498:http://dx.doi.org/10.1063/1.118498]]
+"Investigation of the growth mechanism of layered semiconductor GaSe"
--K. Ueno, N. Takeda, K. Sasaki and A. Koma
--Appl. Surf. Sci. ''113-114'' (1997) 38-42
--DOI:[[10.1016/S0169-4332(96)00837-9:http://dx.doi.org/10.1016/S0169-4332(96)00837-9]]
+[["Nanostructure fabrication using selective growth on nanosize patterns drawn by a scanning probe microscope":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002601]]
--K. Sasaki, K. Ueno and A. Koma
--Jpn. J. Appl. Phys. ''36'' (1997) 4061-4064
--DOI:[[10.1143/JJAP.36.4061:http://dx.doi.org/10.1143/JJAP.36.4061]]
+"Van der Weals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H-Si(111)"
--T. Loeher, K. Ueno and A. Koma
--Appl. Surf. Sci. ''130-132'' (1998) 334-339
--DOI:[[10.1016/S0169-4332(98)00080-4:http://dx.doi.org/10.1016/S0169-4332(98)00080-4]]
+[["Fabrication of C&subsc{60}; Nanostructures by Selective Growth on GaSe/MoS&subsc{2}; and InSe/MoS&subsc{2}; Heterostructure Substrates":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002602]]
--K. Ueno, K. Sasaki, T. Nakahara and A. Koma
--Appl. Surf. Sci. ''130-132'' (1998) 670-675
--DOI:[[10.1016/S0169-4332(98)00136-6:http://dx.doi.org/10.1016/S0169-4332(98)00136-6]]
+[["A Novel Method to Fabricate a Molecular Quantum Structure: Selective Growth of C&subsc{60}; on Layered Material Heterostructures":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002622]]
--K. Ueno, K. Sasaki, K. Saiki and A. Koma
--Jpn. J. Appl. Phys. ''38'' (1999) 511-514
--DOI:[[10.1143/JJAP.38.511:http://dx.doi.org/10.1143/JJAP.38.511]]
+"Growth and Characterization of Ga&subsc{2};Se&subsc{3};/GaAs(100) Epitaxial Thin Films"
--K. Ueno, M. Kawayama, Z. R. Dai, A. Koma and F. S. Ohuchi
--J. Cryst. Growth ''207'' (1999) 69-76
--DOI:[[10.1016/S0022-0248(99)00359-0: http://dx.doi.org/10.1016/S0022-0248(99)00359-0]]
+[["Highly sensitive RHEED measurement by use of micro-channel imaging plate":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002598]]
--K. Saiki, T. Kono, K. Ueno and A. Koma
--Rev. Sci. Instrum. ''71'' (2000) 3478-3479
--DOI:[[10.1063/1.1287625:http://dx.doi.org/10.1063/1.1287625]]
+[["Investigation of epitaxial arrangement and electronic structure of a La@C&subsc{82}; film grown on a MoS&subsc{2}; surface":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002591]]
--K. Iizumi, Y. Uchino, K. Ueno, A. Koma, K. Saiki, Y. Inada, K. Nagai, Y. Iwasa and T. Mitani
--Phys. Rev. B ''62'' (2000) 8281-8285
--DOI:[[10.1103/PhysRevB.62.8281:http://dx.doi.org/10.1103/PhysRevB.62.8281]]
+[["Investigation of the Growth Mechanism of an InSe Epitaxial Layer on a MoS&subsc{2}; Substrate":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002603]]
--T. Hayashi, K. Ueno, K. Saiki and A. Koma
--J. Cryst. Growth ''219'' (2000) 115-122
--DOI:[[10.1016/S0022-0248(00)00627-8:http://dx.doi.org/10.1016/S0022-0248(00)00627-8]]
+"Electron Energy Loss Spectroscopy of C&subsc{60}; Monolayer Films on Active and Inactive Surfaces"
--K. Iizumi, K. Ueno, K. Saiki and A. Koma
--Appl. Surf. Sci. ''169-170'' (2001) 142-146
--DOI:[[10.1016/S0169-4332(00)00740-6:http://dx.doi.org/10.1016/S0169-4332(00)00740-6]]
+[["Electron-Energy-Loss Spectroscopy of K&subsc{x};C&subsc{60}; and K-halides: Comparison in the K&subsc{3p}; Excitation Region":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002623]]
--K. Ueno, Y. Uchino, K. Iizumi, K. Saiki and A. Koma
--Appl. Surf. Sci. ''169-170'' (2001) 184-187
--DOI:[[10.1016/S0169-4332(00)00729-7:http://dx.doi.org/10.1016/S0169-4332(00)00729-7]]
+[["Fabrication of GaAs Quantum Dots on a Bilayer-GaSe Terminated Si(111) Substrate":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002624]]
--K. Ueno, K. Saiki and A. Koma
--Jpn. J. Appl. Phys. ''40'' (2001) 1888-1891
--DOI:[[10.1143/JJAP.40.1888:http://dx.doi.org/10.1143/JJAP.40.1888]]
+[["Epitaxial growth and electronic structure of a C&subsc{60}; derivative prepared by using a solution spray technique":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002599]]
--T. Shimada, H. Nakatani, K. Ueno, A. Koma, Y. Kuninobu, M. Sawamura and E. Nakamura
--J. Appl. Phys. ''90'' (2001) 209-212
--DOI:[[10.1063/1.1379052:http://dx.doi.org/10.1063/1.1379052]]
+[["Highly-stable passivation of a Si(111) surface using bilayer-GaSe":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002625]]
--K. Ueno, H. Shirota, T. Kawamura, T. Shimada, K. Saiki and A. Koma
--Appl. Surf. Sci. ''190'' (2002) 485-490
--DOI:[[10.1016/S0169-4332(01)00923-0:http://dx.doi.org/10.1016/S0169-4332(01)00923-0]]
+[["Epitaxial growth of a vacancy-ordered Ga&subsc{2};Se&subsc{3}; thin film on a vicinal Si(001) substrate":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002604]]
--K. Ueno, S. Tokuchi, K. Saiki and A. Koma
--J. Cryst. Growth. ''237-239'' (2002) 1610-1614.
--DOI:[[10.1016/S0022-0248(01)02353-3:http://dx.doi.org/10.1016/S0022-0248(01)02353-3]]
+[["Nanoscale anodic oxidation on a Si(111) surface terminated by bilayer-GaSe":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002626]]
--K. Ueno, R. Okada, K. Saiki and A. Koma
--Surf. Sci. ''514'' (2002) 27-32
--DOI:[[10.1016/S0039-6028(02)01603-5:http://dx.doi.org/10.1016/S0039-6028(02)01603-5]]
+"Visible light photoemission and negative electron affinity of single-crystalline CsCl thin films"
--G. Yoshikawa, M. Kiguchi, K. Ueno, A. Koma and K. Saiki
--Surf.Sci. ''544'' (2003) 220-226
--DOI:[[10.1016/j.susc.2003.08.016:http://dx.doi.org/10.1016/j.susc.2003.08.016]]
+"Accumulation and Depletion Layer Thicknesses in Organic Field Effect Transistors"
--M. Kiguchi, M. Nakayama, K. Fujiwara, K. Ueno, T. Shimada and K. Saiki
--Jpn. J. Appl. Phys. ''42'' (2003) L1408-L1410
--DOI:[[10.1143/JJAP.42.L1408:http://dx.doi.org/10.1143/JJAP.42.L1408]]
+"Scanning Tunneling Microscopy and Spectroscopy Study of LiBr/Si(001) Heterostructure"
--M. Katayama, K. Ueno, A. Koma, M. Kiguchi and K. Saiki
--Jpn. J. Appl. Phys. ''43'' (2004) L203-L205
--DOI:[[10.1143/JJAP.43.L203:http://dx.doi.org/10.1143/JJAP.43.L203]]
+"Methyl-terminated Si(111) surface as the ultra thin protection layer to fabricate position-controlled alkyl SAMs by using atomic force microscope anodic oxidation"
--R. Okada, T. Miyadera, T. Shimada, A. Koma, K. Ueno and K. Saiki
--Surf. Sci. ''552'' (2004) 46-52
--DOI:[[10.1016/j.susc.2004.01.026:http://dx.doi.org/10.1016/j.susc.2004.01.026]]
+[["Morphological change of C&subsc{60}; monolayer epitaxial films under photoexcitation":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002590]]
--Y. Yamamoto, H. Ichikawa, K. Ueno, A. Koma, K. Saiki, T. Shimada
--Phys. Rev. B ''70'' (2004) 155415
--DOI:[[10.1103/PhysRevB.70.155415:http://dx.doi.org/10.1103/PhysRevB.70.155415]]
+[["Bulk-like pentacene epitaxial films on hydrogen-terminated Si(111)":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002589]]
--T. Shimada, H. Nogawa, T. Hasegawa, R. Okada, H. Ichikawa, K. Ueno and K. Saiki
--Appl. Phys. Lett. ''87'' (2005) 061917
--DOI:[[10.1063/1.2008371:http://dx.doi.org/10.1063/1.2008371]]
+[["Anodization of electrolytically polished Ta surfaces for enhancement of carrier injection into organic field effect transistors":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002588]]
--K. Ueno, S. Abe, R. Onoki and K. Saiki
--J. Appl. Phys. ''98'' (2005) 114503 (5 pages)
--DOI:[[10.1063/1.2138807:http://dx.doi.org/10.1063/1.2138807]]
+"Fabrication of an organic field-effect transistor on a mica gate dielectric"
--A. Matsumoto, R. Onoki, K. Ueno, S. Ikeda and K. Saiki
--Chem. Lett. ''35'' (2006) 354-355
--DOI:[[10.1246/cl.2006.354:http://dx.doi.org/10.1246/cl.2006.354]]
+"In-situ measurement of molecular orientation of the pentacene ultrathin films grown on SiO&subsc{2}; substrates"
--G. Yoshikawa, T. Miyader, R. Onoki, K. Ueno, I. Nakai, S. Entani, S. Ikeda, D. Guo, M. Kiguchi, H. Kondoh,T. Ohta and K. Saiki
--Surf. Sci. ''600'' (2006) 2518-2522
--DOI:[[10.1016/j.susc.2006.04.012:http://dx.doi.org/10.1016/j.susc.2006.04.012]]
+"Structure of Organic Thin Films Grown on Surface-modified Tantalum Oxide"
--R. Onoki, S. Abe, K. Ueno, H. Nakahara and K. Saiki
--Chem. Lett. ''35'' (2006) 746-747
--DOI:[[10.1246/cl.2006.746:http://dx.doi.org/10.1246/cl.2006.746]]
+"Anisotropic Polymerization of a Long-chain Diacetylene Derivative Langmuir-Blodgett Film on a Step-bunched SiO&subsc{2};/Si Surface"
--R. Onoki, K. Ueno, H. Nakahara, G. Yoshikawa, S. Ikeda, S. Entani, T. Miyadera, I. Nakai, H. Kondoh, T. Ohta, M. Kiguchi and K. Saiki
--Langmuir ''22'' (2006) 5742-5747
--DOI:[[10.1021/la060482d:http://dx.doi.org/10.1021/la060482d]]
+[["Effect of Organic Buffer Layer on Performance of Pentacene Field-Effect Transistor Fabricated on Natural Mica Gate Dielectric":http://sucra.saitama-u.ac.jp/modules/xoonips/detail.php?id=A1002592]]
--A. Matsumoto, R. Onoki, S. Ikeda, K. Saiki and K. Ueno
--Jpn. J. Appl. Phys. ''46'' (2007) L913-L916
--DOI:[[10.1143/JJAP.46.L913:http://dx.doi.org/10.1143/JJAP.46.L913]] 
+"Layer-by-layer growth of C&subsc{60}; thin films by continuous-wave infrared laser deposition"
--S. Yaginuma, K. Itaka, M. Haemori, M. Katayama, K. Ueno, T. Ohnishi, M. Lippmaa, Y. Matsumoto and H. Koinuma
--Appl. Phys. Express ''1'' (2008) 015005
--DOI:[[10.1143/APEX.1.015005:http://dx.doi.org/10.1143/APEX.1.015005]]
+"Nano-transfer of the polythiophene molecular alignment onto the step-bunched vicinal Si(111) substrate"
--R. Onoki, G. Yoshikawa, Y. Tsuruma, S. Ikeda, K. Saiki and K. Ueno
--Langmuir ''24'' (2008) 11605-11610
--DOI:[[10.1021/la8016722:http://dx.doi.org/10.1021/la8016722]]
+"Nucleation on the substrate surfaces during liquid flux mediated vacuum deposition of rubrene"
--T. Shimada, Y. Ishii, K. Ueno, N. Yoshimoto and T. Hasegawa
--J. Cryst. Growth ''311'' (2008) 163-166
--DOI:[[10.1016/j.jcrysgro.2008.10.096:http://dx.doi.org/10.1016/j.jcrysgro.2008.10.096]]
+"Step-bunched Bi-terminated Si(111) surfaces as a nanoscale orientation template for quasi single crystalline epitaxial growth of thin film phase pentacene"
--T. Shimada,  M. Ohtomo,  T. Suzuki,  T. Hasegawa,  K. Ueno,  S. Ikeda,  K. Saiki,  M. Sasaki and  K. Inaba
--Appl. Phys. Lett. ''93'' (2008) 223303 (3 pages)
--DOI:[[10.1063/1.3040309:http://dx.doi.org/10.1063/1.3040309]]  
+"Origin of the ambipolar operation of a pentacene field-effect transistor fabricated on a poly(vinyl alcohol)-coated Ta&subsc{2};O&subsc{5}; gate dielectric with Au source/drain electrodes"
--S. Takebayashi, S. Abe, K. Saiki and K. Ueno
--Appl. Phys. Lett. ''94'' (2009) 083305 (3 pages)
--Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article may be found at [[http://link.aip.org/link/?APL/94/083305:http://link.aip.org/link/?APL/94/083305]].
--[[pdfファイルのダウンロードはこちら:http://surface-www.chem.saitama-u.ac.jp/wiki/APPLAB948083305_1.pdf]]
--DOI:[[10.1063/1.3089692:http://dx.doi.org/10.1063/1.3089692]]
+"Fabrication of Transparent and Flexible Organic Field-Effect Transistors with Solution-Processed Graphene Source-Drain and Gate Electrodes"
--K. Suganuma, S. Watanabe, T. Gotou and K. Ueno
--[[Appl. Phys. Express ''4'' (2011) 021603 (3 pages):http://apex.jsap.jp/link?APEX/4/021603/]]
--DOI:[[10.1143/APEX.4.021603:http://dx.doi.org/10.1143/APEX.4.021603]]
+"Depth profile characterization of spin-coated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) films by spectroscopic ellipsometry"
--T. Ino, T. Hayashi, T. Fukuda, K. Ueno and H. Shirai
--Phys. Stat. Solidi C ''8'' (2011) 3025-3028
--DOI:[[10.1002/pssc.201001218:http://dx.doi.org/10.1002/pssc.201001218]]
+"Atmospheric-pressure argon plasma etching of spin-coated 3,4-polyethylenedioxythiophene:polystyrenesulfonic acid (PEDOT:PSS) films for cupper phtalocyanine (CuPc)/C&subsc{60}; heterojunction thin-film solar cells"
--T. Ino, T. Hayshi, K. Ueno, and H. Shirai
--Thin Solid Films ''519'' (2011) 6834-6839
--DOI:[[10.1016/j.tsf.2011.04.042:http://dx.doi.org/10.1016/j.tsf.2011.04.042]]
+"Efficient Organic Photovoltaic Cells Using Hole-Transporting MoO&subsc{3}; Buffer Layers Converted from Solution-Processed MoS&subsc{2}; Films"
--S. Kato, R. Ishikawa, Y. Kubo, H. Shirai, and K. Ueno
--Jpn. J. Appl. Phys. ''50'' (2011) 071604 (5 pages)
--DOI:[[10.1143/JJAP.50.071604:http://dx.doi.org/10.1143/JJAP.50.071604]]
+"Bulk-heterojunction organic photovoltaic cell fabricated by electrospray deposition method using mixed organic solvent"
--T. Fukuda, K. Takagi, T. Asano, Z. Honda, N. Kamata, K. Ueno, H. Shirai, J. Ju, Y. Yamagata, and Y. Tajima
--Phys. Status Solidi RRL ''5'' (2011) 229-231
--DOI:[[10.1002/pssr.201105232:http://dx.doi.org/10.1002/pssr.201105232]]
+"Real-Time Ellipsometric Characterization of Initial Growth Stage of Poly(3,4-ethylene dioxythiophene):Poly(styrene sulfonic acid) Films by Electrospray Deposition"
--T. Ino, T. Asano, T. Fukuda, K. Ueno, and H. Shirai
--Jpn. J. Appl. Phys. ''50'' (2011) 081603 (5 pages)
--DOI:[[10.1143/JJAP.50.081603:http://dx.doi.org/10.1143/JJAP.50.081603]]
//+”Depth Profile Characterization of Spin-Coated Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films for Thin-Film Solar Cells during Argon Plasma Etching by Spectroscopic Ellipsometry"
//--T. Ino, T. Hayashi, K. Ueno, and H. Shirai
//--Jpn. J. Appl. Phys. ''50'' (2011) 08JG02 (5 pages)
//--DOI:[[10.1143/JJAP.50.08JG02:http://dx.doi.org/10.1143/JJAP.50.08JG02]]
//+"Real-Time Ellipsometric Characterization of the Initial Growth Stage of Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films by Electrospray Deposition"
//--T. Ino, T. Asano, T. Fukuda, K. Ueno, and H. Shirai
//--J. Nanosci. Nanotech. ''11'' (2011) 8030-8034 
//--DOI:[[10.1166/jnn.2011.5064:http://dx.doi.org/10.1166/jnn.2011.5064]]
+"Surface Modification of Poly(3,4-ethylene dioxthiophene):Poly(styrene sulfonic acid) (PEDOT:PSS) Films by Atmospheric-Pressure Argon Plasma for Organic Thin-Film Solar Cells"
--T. Ino, T. Hayashi, T. Fukuda, K. Ueno, and H. Shirai
--J. Nanosci. Nanotech. ''11'' (2011) 8035-8039
--DOI:[[10.1166/jnn.2011.5065:http://dx.doi.org/10.1166/jnn.2011.5065]]
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